aot1404l/AOB1404L 40v n-channel rugged planar mosfet general description product summary v ds i d (at v gs =10v) 220a r ds(on) (at v gs =10v) < 4.2m w 100% uis tested 100% r g tested symbol v 40v the aot1404l/AOB1404L uses a robust technology that is designed to provide efficient and reliable power conversion even in the most demanding applications, including motor control. with low r ds(on) and excellent thermal capability this device is appropriate for h igh current switching and can endure adverse operating conditions. drain-source voltage 40 v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted g ds to220 top view bottom view g g s d d s d d to-263 d 2 pak top view bottom view d d s g g s v ds v gs i dm i as , i ar e as , e ar t j , t stg symbol t 10s steady-state steady-state r q jc maximum junction-to-case c/w c/w maximum junction-to-ambient a d 0.3 60 0.36 power dissipation b p d w power dissipation a p dsm w t a =70c 417 1.3 t a =25c a t a =25c i dsm a t a =70c i d 220 157 t c =25c t c =100c avalanche current c 11 continuous drain current 980 15 a 140 drain-source voltage 40 v units junction and storage temperature range -55 to 175 c thermal characteristics v 20 gate-source voltage avalanche energy l=0.1mh c mj maximum junction-to-ambient a c/w r q ja 12 48 15 500 pulsed drain current c continuous drain current g parameter typ max t c =25c 2.1 208 t c =100c g ds to220 top view bottom view g g s d d s d d to-263 d 2 pak top view bottom view d d s g g s rev1: may 2011 www.aosmd.com page 1 of 6
aot1404l/AOB1404L symbol min typ max units bv dss 40 v v ds =40v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 2.5 3.1 3.7 v i d(on) 500 a 3.6 4.2 t j =125c 6 7 3.3 3.9 m w g fs 55 s v sd 0.7 1 v i s 220 a c iss 2840 3568 4300 pf c oss 960 1388 1810 pf c rss 85 151 215 pf r g 1.5 3.1 4.7 w q g (10v) 55 71 86 nc q gs 15 nc q gd 23 nc t d(on) 16 ns t 30 ns reverse transfer capacitance v gs =0v, v ds =20v, f=1mhz switching parameters electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =20a i dss m a v ds =v gs , i d =250 ma v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current forward transconductance diode forward voltage m w to220 i s =1a,v gs =0v v ds =5v, i d =20a v gs =10v, i d =20a to263 r ds(on) static drain-source on-resistance v =10v, v =20v, r =1 w , gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =10v, v ds =20v, i d =20a gate source charge gate drain charge maximum body-diode continuous current g input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time t r 30 ns t d(off) 54 ns t f 20 ns t rr 35 45 55 ns q rr 225 287 350 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. i f =20a, di/dt=500a/ m s body diode reverse recovery time v gs =10v, v ds =20v, r l =1 w , r gen =3 w turn-off fall time body diode reverse recovery charge i f =20a, di/dt=500a/ m s turn-on rise time turn-off delaytime a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r q ja and the maximum allowed junction temperature of 150 c. the value in any given application depends on the user's specific board design, and the maximu m temperature of 175 c may be used if the pcb allows it. b. the power dissipation p d is based on t j(max) =175 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =175 c. ratings are based on low frequency and duty cycl es to keep initial t j =25 c. maximum uis current limited by test equipment. d. the r q ja is the sum of the thermal impedance from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =175 c. the soa curve provides a single pulse rating. g. the maximum current limited by package is 120a. h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. rev1: may 2011 www.aosmd.com page 2 of 6
aot1404l/AOB1404L typical electrical and thermal characteristics 17 52 10 0 18 0 20 40 60 80 100 0 1 2 3 4 5 6 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 0 2 4 6 8 0 5 10 15 20 25 30 r ds(on) (m w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 0 25 50 75 100 125 150 175 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =10v i d =20a 25 c 125 c v ds =5v v gs =10v 0 20 40 60 80 100 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =4v 4.5v 5.5v 10v 5v 40 0 20 40 60 80 100 0 1 2 3 4 5 6 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 0 2 4 6 8 0 5 10 15 20 25 30 r ds(on) (m w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 0 25 50 75 100 125 150 175 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =10v i d =20a 0 2 4 6 8 10 2 4 6 8 10 r ds(on) (m w ww w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) 25 c 125 c v ds =5v v gs =10v i d =20a 25 c 125 c 0 20 40 60 80 100 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =4v 4.5v 5.5v 10v 5v rev1: may 2011 www.aosmd.com page 3 of 6
aot1404l/AOB1404L typical electrical and thermal characteristics 17 52 10 0 18 0 2 4 6 8 10 0 15 30 45 60 75 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 1500 3000 4500 6000 7500 9000 0 10 20 30 40 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0 1500 3000 4500 6000 7500 9000 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction-to- case (note f) c oss c rss v ds =20v i d =20a t j(max) =175 c t c =25 c 10 m s 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =175 c t c =25 c 100 m s 40 0 2 4 6 8 10 0 15 30 45 60 75 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 1500 3000 4500 6000 7500 9000 0 10 20 30 40 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0 1500 3000 4500 6000 7500 9000 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction-to- case (note f) 0.01 0.1 1 10 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 z q qq q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) c oss c rss v ds =20v i d =20a single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =175 c t c =25 c 10 m s 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =175 c t c =25 c 100 m s r q jc =0.36 c/w rev1: may 2011 www.aosmd.com page 4 of 6
aot1404l/AOB1404L typical electrical and thermal characteristics 17 52 10 0 18 0 100 200 300 400 500 0 25 50 75 100 125 150 175 power dissipation (w) t case ( c) figure 13: power de-rating (note f) 0 50 100 150 200 250 300 0 25 50 75 100 125 150 175 current rating i d (a) t case ( c) figure 14: current de-rating (note f) 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 15: single pulse power rating junction-to- ambient (note h) t a =25 c 0 50 100 150 200 250 1 10 100 1000 10000 i ar (a) peak avalanche current time in avalanche, t a (ms) figure 12: single pulse avalanche capability (note c) t a =25 c t a =150 c t a =100 c t a =125 c 40 0.001 0.01 0.1 1 10 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 16: normalized maximum transient thermal imp edance (note h) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0 100 200 300 400 500 0 25 50 75 100 125 150 175 power dissipation (w) t case ( c) figure 13: power de-rating (note f) 0 50 100 150 200 250 300 0 25 50 75 100 125 150 175 current rating i d (a) t case ( c) figure 14: current de-rating (note f) 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 15: single pulse power rating junction-to- ambient (note h) t a =25 c r q ja =60 c/w 0 50 100 150 200 250 1 10 100 1000 10000 i ar (a) peak avalanche current time in avalanche, t a (ms) figure 12: single pulse avalanche capability (note c) t a =25 c t a =150 c t a =100 c t a =125 c rev1: may 2011 www.aosmd.com page 5 of 6
aot1404l/AOB1404L - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off id + l vgs vds bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr rev1: may 2011 www.aosmd.com page 6 of 6
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